F3L75R12W1H3

 F3L75R12W1H3_B27

F3L75R12W1H3_B27

F3L75R12W1H3_B27

F3L75R12W1H3_B27

F3L75R12W1H3_B27

F3L75R12W1H3_B27

F3L75R12W1H3_B27

F3L75R12W1H3_B27

F3L75R12W1H3_B27

F3L75R12W1H3_B27

F3L75R12W1H3_B27

F3L75R12W1H3_B27

F3L75R12W1H3_B27

F3L75R12W1H3B27

F3L75R12W1H3B27

F3L75R12W1H3B27

F3L75R12W1H3B27

F3L75R12W1H3B27

F3L75R12W1H3B27

F3L75R12W1H3

F3L75R12W1H3

F3L75R12W1H3

F3L75R12W1H3

F3L75R12W1H3

F3L75R12W1H3

制造商: Infineon
产品种类: IGBT 模块
RoHS: 详细信息
产品: IGBT Silicon Modules
配置: 3-Phase
集电极—发射极最大电压 VCEO: 1.2 kV
集电极—射极饱和电压: 1.45 V
在25 C的连续集电极电流: 45 A
栅极—射极漏泄电流: 100 nA
Pd-功率耗散: 275 W
封装 / 箱体: EasyPack1B
最小工作温度: - 40 C
最大工作温度: + 150 C
封装: Tray
商标: Infineon Technologies
安装风格: Clamp
栅极/发射极最大电压: +/- 20 V
产品类型: IGBT Modules
工厂包装数量: 24
子类别: IGBTs